WebInfineon Technologies. Sep 2024 - Present8 months. Los Angeles, California, United States. Currently working on GaN reliability. I found interest to deep dive into device level physics for GaN ... WebIntroductionOften the most challenging aspect of Hot Swap™ circuit design is verifying that a MOSFET’s Safe Operating Area (SOA) is not exceeded. The SOAtherm tool distributed …
Rakesh Panda - Staff Application Engineer for GAN reliability ...
Webthe MOSFET data sheet and show how it is used to ensure safe operation of the FET in an application without damaging it. 2 Review the SOA Graph. The SOA graph for the … WebThe Power MOSFET structure contains a parasitic BJT, which could be activated by an excessive rise rate of the drain-source voltage (dv/dt), particularly immediately after the … dynamic what if analysis in excel
Power MOSFET single-shot and repetitive avalanche ruggedness …
WebIndustrial Engineer/Manager with more than 20 years experience in Manufacturing Operations, specialized in Production Management and … WebJieJie Microelectronics hereby launches a new generation of 100V P-channel SGT MOSFET, which improves FOM performance by 20% compared with the previous generation design, having been considered world-leading.The advanced PDFN3x3-8L and PDFN5x6-8L low profile packages boast 64% and 48% smaller area and 45% and 55% … WebUsing the high-κ and p-type AlTiO, in conjunction with a thinner AlGaN barrier under gate, 600-V e-mode GaN HEMTs are demonstrated with … cs 2082 liebherr stainless steel wrap